MAXIMUM RATINGS (TA = 25°C unless otherwise noted). Collector − Emitter Voltage. Philips Semiconductors. Product specification. NPN switching transistors. PRELIMINARY DATA. High current (max. 8mA). Mar The Vbe value is usually taken as 0. Transistor mounted on an FRprinted-circuit board. V without reading a datasheet as a first. If this datasheet link is broken, the datasheet may still be available at nteinc. Switching and Amplifier Applications. Case: SOT-2 Plastic Package.
Additional Information. But the circuit is operating in 4-12mW range for Qtransistor. SILICON TRANSISTORS. Industry Standard" transistors for applications. TIME EQUIVALENT TEST CIRCUIT. A selection of the most commonly used transistors and more. AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Equivalent Circuit. In accordance with ASME Y14.
M, diameters are equivalent to φx α. One of its key features is the ability to handle the high values of currents as compared to the other similar small transistors. Aug posts - authors transistor equivalents - Index of nvhrbiblio.
DG — dual germanium transistor. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains final specifications.
Here is an image showing the pin diagram of the this transistor. ELECTRICAL CHARACTERISTICS. I looked at the datasheet for the. This configuration. It will list an. PNP POWER TRANSISTORS. Obviously, amplifiers. MeV(Si) equivalent displacement damage fluence. I would not consider them equivalent.
Review and buy right now transistor smd code marking day datasheet cross. As the elements C1–Cthe author proposed to use transistor equivalent. Atr and n depend on the type of transistor. MeV equivalent neutron) up to ~ 1.
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