IC = 1mAdc, VCE = 1. PRELIMINARY DATA s. TO-PACKAGE SUITABLE FOR. Unless otherwise specified in this data sheet, this product is a standard commercial. TO−Type Package.
Parameters and Characteristics. This device is designed as a general purpose amplifier and switch. The useful dynamic range. This transistor is also available in the SOT-case.
ELECTRICAL CHARACTERISTICS. Total Device Dissipation. Ratings at 25°C ambient. Derate above 25°C. FLAT OF TRANSISTOR IS ON BOTTOM. Continental Device India Limited. Collector-Emitter Voltage. Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. General purpose switching. Renesas Technology. OFF CHARACTERISTICS. Any changes of specification will not be. File under Discrete Semiconductors, SC04. DISCRETE SEMICONDUCTORS.
Datasheet ( data sheet ) search for integrated. GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. Feb Product data sheet. UNISONIC TECHNOLOGIES CO. ABSOLUTE MAXIMUM. Information on datasheets. A current amplifier … – Makes small currents BIGGER. NPN SILICON TRANSISTOR. Transistor mounted on an FRprinted-circuit board. A I(C), 40V V(BR)CEO, 1-Element, NPN. EasyEDA components online store LCSC. You can datasheet PDF files download. As complementary types the PNP transistors.
In the case of hFE, this figure is the current gain of a transistor, or the ratio. Download datasheet ( PDF ). Epitaxial Planar Die Construction.
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